050-7148 rev e 3-2012 600v 94a apt94n60l2c3 APT94N60L2C3G* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings per die: t c = 25c unless otherwise speci ? ed . static electrical characteristics ultra low r ds(on) low miller capacitance ultra low gate charge, q g avalanche energy rated extreme dv / dt rated dual die (parallel) popular t-max package super junction mosfet "coolmos? comprise a new family of transistors developed by in? neon technologies ag. "coolmos" is a trade- mark of in? neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com symbol parameter apt94n60l2c3(g) unit v dss drain-source voltage 600 volts i d continuous drain current @ t c = 25c 94 amps i dm pulsed drain current 1 282 v gs gate-source voltage continuous 20 volts v gsm gate-source voltage transient 30 p d total power dissipation @ t c = 25c 833 watts linear derating factor 6.67 w/c t j ,t stg operating and storage junction temperature range -55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 300 dv / dt drain-source voltage slope (v ds = 480v, i d = 94a, t j = 125c) 50 v/ns i ar repetitive avalanche current 7 20 amps e ar repetitive avalanche energy 7 1 mj e as single pulse avalanche energy 4 1800 to-264 symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 500 a) 600 volts r ds(on) drain-source on-state resistance 2 (v gs = 10v, i d = 60a) 0.03 0.035 ohms i dss zero gate voltage drain current (v ds = 600v, v gs = 0v) 1.0 50 a zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) 500 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 200 na v gs(th) gate threshold voltage (v ds = v gs , i d = 5.4ma) 2.10 3 3.9 volts caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. downloaded from: http:///
050-7148 rev e 3-2012 apt94n60l2c3(g) 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -5 10 -4 10 -3 10 -2 0.1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 13600 pf c oss output capacitance 4400 c rss reverse transfer capacitance 290 q g total gate charge 5 v gs = 10v v dd = 300v i d = 94a @ 25c 505 640 nc q gs gate-source charge 48 q gd gate-drain ("miller ") charge 240 t d(on) turn-on delay time inductive switching v gs = 13v v dd = 380v i d = 94a @ 125c r g = 0.9 18 ns t r rise time 27 t d(off) turn-off delay time 110 165 t f fall time 8 1 2 e on turn-on switching energy 6 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 94a, r g = 5 2040 j e off turn-off switching energy 3515 e on turn-on switching energy 6 inductive switching @ 125c v dd = 400v, v gs = 15v i d =94a, r g = 5 2920 e off turn-off switching energy 3970 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 94 amps i sm pulsed source current 2 (body diode) 282 v sd diode forward voltage 4 (v gs = 0v, i s = -94a) 1 1.2 volts dv / dt peak diode recovery dv / dt 7 6 v/ns t rr reverse recovery time (i s = -94a, di / dt = 100a/ s) 861 ns q rr reverse recovery charge(i s = -94a, di / dt = 100a/ s) 46 c source-drain diode ratings and characteristics thermal characteristics symbol characteristic min typ max unit r jc junction to case 0.15 c/w r ja junction to ambient 62 1 continuous current limited by package lead temperature. 2 repetitive rating: pulse width limited by maximum junction temperature 3 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 4 pulse test: pulse width < 380 s, duty cycle < 2% 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. 7 maximum 125c diode commutation speed = di/dt 600a/ s downloaded from: http:///
050-8069 rev e 3-2012 typical performance curves apt94n60l2c3(g) 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 0. .95 1 .05 1. 1 .15 -50 0 50 100 150 0.8 0.9 1 1.1 1.2 1.3 1.4 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 0 5 10 15 20 25 30 6.5v 4v 10 &15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current i dr , reverse t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.5 1 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 5.5v 6v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 47a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 1 10 100 800 1 10 100 800 1ms 100ms dc line 100 s 10ms 10 s downloaded from: http:///
050-8069 rev e 3-2012 typical performance curves apt94n60l2c3(g) 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 10 20 30 40 50 0 50 00 50 00 50 00 0 40 80 120 160 1 10 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 100 200 300 400 500 600 700 0 40 80 120 160 0 2 4 6 8 10 12 0 200 400 600 800 10 100 1,000 10,000 60,000 0 100 200 300 400 500 600 c iss t j = =25c v ds = 520v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 325v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 2000 4000 6000 8000 10000 12000 0 25 50 75 100 125 150 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 94a v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 94a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 130v downloaded from: http:///
figure 17, turn-on switching waveforms and de? nitions figure 18, turn-off switching waveforms and de? nitions 10% t d(on) 10% t r 90% 5% t collector current collector voltage gate voltage t j = 125 c switching energy 5 % t t j = 125 c collector voltage collector current gate voltage 90% 90% t f t d(off) 10% switching energy 0 i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit 75dq60 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drai n source gate dimensions in millimeters and (inches) drai n 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. e3 100% sn plated to-264 (l) package outline typical performance curves apt94n60l2c3(g) 050-8069 rev e 3-2012 downloaded from: http:///
|
